CSD18542KTT Datasheet دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت CSD18542KTT Datasheet	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD18542KTTT
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 250W
Total Gate Charge (Qg@Vgs): 57nC@10V
Input Capacitance (Ciss@Vds): 5070pF@30V
Continuous Drain Current (Id): 200A;170A
Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@100A,10V
Package: TO-263-3
Manufacturer: Texas Instruments
Power Dissipation (Max): 250W (Tc)
Base Part Number: CSD1854
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
FET Feature: -
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Series: NexFET™
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 170A (Tc)
Supplier Device Package: DDPAK/TO-263-3
Vgs (Max): ±20V
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Drain to Source Voltage (Vdss): 60V
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 30V
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
detail: N-Channel 60V 200A (Ta), 170A (Tc) 250W (Tc) Surface Mount DDPAK/TO-263-3